Cambridge GaN Devices Ltd. (CGD) is a fabless semiconductor company out of Cambridge university. CGD has just launched its first series of Gallium Nitride based products, the ICeGaN 650 V H1 series. CGD’s GaN solutions boast a reduction in electrical losses of up to 50% and the ability to be integrated into applications run by silicon-based devices with no supporting components required for protection.
These claims echo the promises from many GaN component manufacturers, their products allowing for higher power delivery from a smaller form factor. Being able to gain these benefits from a component that can be easily integrated without the need for external components providing protection is a great advantage for CGD. Another key benefit is the removal of the requirement of a specific GaN FET driver as, similar to Transphorm’s SuperGaN products, existing silicon based FET drivers can be used. The advantages of GaN and it’s uses in external power adapters & chargers are explored in SAR Insight & Consulting’s upcoming GaN Power Adapters Report, being released as part of the wider USB Power & Charging service.
